FERMI-EDGE SINGULARITIES IN INXGA1-XAS AND GAAS QUANTUM WIRES

被引:18
作者
FRITZE, M
NURMIKKO, AV
HAWRYLAK, P
机构
[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912
[2] NATL RES COUNCIL CANADA,OTTAWA K1A 0R6,ONTARIO,CANADA
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 07期
关键词
D O I
10.1103/PhysRevB.48.4960
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Strong Fermi-edge singularities (FES) were observed in the magnetoluminescence spectra of InxGa1-xAs quantum wires. The distinct shift of spectral weight and peaks at the Fermi energy are strongly temperature dependent, broadening and diminishing in intensity by T = 30 K. The FES features shifted diamagnetically in applied magnetic fields, indicative of excitonlike bound states, while the rest of the electron gas was Landau quantized giving also a measure of the typical electronic wire widths of L(ww) almost-equal-to 500 angstrom. While the FES effects in the InxGa1-xAs quantum wires are associated with spatially direct transitions, aided by hole localization, we have also observed related effects in GaAs, where a Schottky-gate bias is needed to induce the effect due to the dominantly spatially indirect nature of the transitions.
引用
收藏
页码:4960 / 4963
页数:4
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