PRECISE DETERMINATION OF MULTIPHONON AND PHOTON CARRIER GENERATION PROPERTIES USING IMPURITY PHOTOVOLTAIC EFFECT IN SEMICONDUCTORS

被引：19

作者：

SAH, CT

TASCH, AF

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.19.69

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：69 / +

页数：1

共 6 条

[1]

HANNAY NB, 1959, SEMICONDUCTORS ED

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[4]

SAH CT, 1967, PR INST ELECTR ELECT, V55, P654

[5] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[6]

Smith R. A., 1959, SEMICONDUCTORS