ENERGY-LEVELS AND PHOTO-QUENCHING PROPERTIES OF THE ARSENIC ANTI-SITE IN GAAS

被引：16

作者：

MEYER, BK

HOFMANN, DM

SPAETH, JM

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1987年 / 20卷 / 16期

关键词：

D O I：

10.1088/0022-3719/20/16/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2445 / 2451

页数：7

共 20 条

[1] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].

CHANTRE, A ;

VINCENT, G ;

DUBOIS .

PHYSICAL REVIEW B, 1981, 23 (10) :5335-5359

[2] IDENTIFICATION OF ASGA ANTISITE DEFECTS IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

ELLIOTT, K ;

CHEN, RT ;

GREENBAUM, SG ;

WAGNER, RJ .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :907-909

[3]

FITCHEN DB, 1968, PHYSICS COLOR CTR, pCH5

[4] OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF AS-ANTISITE DEFECTS IN GAAS [J].

HOFMANN, DM ;

MEYER, BK ;

LOHSE, F ;

SPAETH, JM .

PHYSICAL REVIEW LETTERS, 1984, 53 (12) :1187-1190

[5]

HOFMANN DM, 1986, MATERIAL SCI FORUM, V11, P311

[6] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

LAGOWSKI, J ;

PARSEY, JM ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :302-304

[7]

LAGOWSKI J, 1982, APPL PHYS LETT, V40, P243

[8] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

[9] MANIFESTATIONS OF DEEP LEVELS POINT-DEFECTS IN GAAS [J].

MARTIN, GM ;

MAKRAMEBEID, S .

PHYSICA B & C, 1983, 116 (1-3) :371-383

[10] OPTICAL-PROPERTIES OF AS-ANTISITE AND EL2 DEFECTS IN GAAS [J].

MEYER, BK ;

SPAETH, JM ;

SCHEFFLER, M .

PHYSICAL REVIEW LETTERS, 1984, 52 (10) :851-854

← 1 2 →