STRUCTURE OF NONRECTANGULAR HGCDTE SUPERLATTICES GROWN BY LASER MOLECULAR-BEAM EPITAXY

被引：12

作者：

CHEUNG, JT

CIRLIN, EH

OTSUKA, N

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

[2] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907

来源：

关键词：

D O I：

10.1063/1.99904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：310 / 312

页数：3

共 3 条

[1] CAPASSO F, 1985, GALLIUM ARSENIDE TEC, pCH8
[2] GROWTH OF HGCDTE EPILAYERS WITH ANY PREDESIGNED COMPOSITIONAL PROFILE BY LASER MOLECULAR-BEAM EPITAXY
CHEUNG, JT
MADDEN, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 705 - 708
[3] INTERDIFFUSION STUDY OF HGTE-HGCDTE SUPERLATTICE .1. LOW-TEMPERATURE AUGER SPUTTER DEPTH PROFILING
CIRLIN, EH
IRELAND, P
BUCKINGHAM, S
WU, O
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04): : 2631 - 2636