ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION OF SILICON-RICH AMORPHOUS SIXC1-X REFRACTORY LAYERS USING SIET4 AS A SINGLE SOURCE

被引：14

作者：

MAURY, F

MESTARI, A

MORANCHO, R

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1989年 / 109卷

关键词：

D O I：

10.1016/0921-5093(89)90566-2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：69 / 75

页数：7

共 17 条

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[2] MICROHARDNESS AND OTHER PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE THIN-FILMS FORMED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
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[3] CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE AND ITS APPLICATIONS
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[J]. THIN SOLID FILMS, 1985, 126 (3-4) : 313 - 318
[4] REACTIVE PLASMA DEPOSITED SIXCYHZ FILMS
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[J]. THIN SOLID FILMS, 1979, 60 (02) : 193 - 200
[5] HOT HARDNESS OF SIC SINGLE-CRYSTAL
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[J]. JOURNAL OF MATERIALS SCIENCE, 1979, 14 (09) : 2253 - 2255
[6] HIROHATA Y, 1970, THIN SOLID FILMS, V63, P237
[7] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION FOR VERY LARGE-SCALE INTEGRATION PROCESSING - REVIEW
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 647 - 657
[8] EVIDENCE FOR GRAPHITIC-TYPE BONDING IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON CARBON ALLOYS
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MADAN, A
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2717 - 2720
[9] Maury F., 1987, Proceedings of the Tenth International Conference on Chemical Vapor Deposition 1987, P1080
[10] INFRARED-ABSORPTION AND BONDING IN AMORPHOUS HYDROGENATED SILICON CARBON ALLOYS
MCKENZIE, DR
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (09) : 1935 - 1948

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