CRYSTALLIZATION OF AMORPHOUS IN2O3 FILMS DURING FILM GROWTH

被引：30

作者：

MURANAKA, S

机构：

[1] Department of Chemistry, College of Liberal Arts and Sciences, Kyoto University, Kyoto

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 12A期

关键词：

AMORPHOUS IN2O3; CRYSTALLIZATION; THIN FILMS; THICKNESS EFFECT; MICROSTRUCTURE;

D O I：

10.1143/JJAP.30.L2062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of the film thickness on crystallization of amorphous indium oxide films was investigated using transmission electron microscopy and electron diffraction. Films of different thicknesses, 10-60 angstrom, were reactively evaporated on SiO substrates at 200-degrees-C. The results showed that the amorphous films crystallized markedly with increasing film thickness above 40 angstrom, while be[ow the thickness of 40 angstrom, the films partially crystallized from pre-existing crystallites. Concurrently, the microstructure of the films became almost continuous above the thickness of 40 angstrom.

引用

页码：L2062 / L2064

页数：3

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