THE ELECTRICAL-PROPERTIES OF SEMICONDUCTOR-METAL, SEMICONDUCTOR LIQUID, AND SEMICONDUCTOR CONDUCTING POLYMER CONTACTS

被引：36

作者：

KUMAR, A

WILISCH, WCA

LEWIS, NS

机构：

[1] Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA

来源：

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1993年 / 18卷 / 04期

基金：

美国国家科学基金会;

关键词：

SEMICONDUCTOR; SEMICONDUCTOR METAL JUNCTION; SEMICONDUCTOR LIQUID JUNCTION; SEMICONDUCTOR CONDUCTING POLYMER JUNCTION; FERMI LEVEL; FERMI LEVEL PINNING; SI; GAAS; INP; CDS; CDSE; CDTE;

D O I：

10.1080/10408439308243731

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Critical comparisons are drawn between the basic electrical properties of semiconductor/metal, semiconductor/liquid, and semiconductor/conducting polymer junctions. A theoretical model is developed to describe the basic current-voltage properties of semiconductor contacts, with emphasis on the contrasts between ideal and observed behavior. Using the concepts from this model, the characteristics of a variety of semiconductor contacts are evaluated. The discussion focuses on the following semiconductors: Si, GaAs, InP, and II-VI compounds based on the Cd-(chalcogenide) materials.

引用

页码：327 / 353

页数：27

共 120 条

[1] ABRAHAMS IL, 1987, NEW J CHEM, V11, P157
[2] [Anonymous], 1980, ELECTROCHEMISTRY SEM
[3] [Anonymous], 1984, METAL SEMICONDUCTOR, DOI DOI 10.1007/978-1-4684-4655-5
[4] A COMPARISON OF THE INTERFACE ENERGETICS FOR N-TYPE CADMIUM SULFIDE-NONAQUEOUS AND CADMIUM TELLURIDE-NONAQUEOUS ELECTROLYTE JUNCTIONS
ARUCHAMY, A
WRIGHTON, MS
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1980, 84 (22) : 2848 - 2854
[5] CHARACTERIZATION OF THE INTERFACE ENERGETICS FOR N-TYPE CADMIUM SELENIDE NON-AQUEOUS ELECTROLYTE JUNCTIONS
ARUCHAMY, A
BRUCE, JA
TANAKA, S
WRIGHTON, MS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 359 - 364
[6] PHOTO-ELECTROCHEMICAL HYDROGEN EVOLUTION AND WATER-PHOTOLYZING SEMICONDUCTOR SUSPENSIONS - PROPERTIES OF PLATINUM GROUP METAL CATALYST SEMICONDUCTOR CONTACTS IN AIR AND IN HYDROGEN
ASPNES, DE
HELLER, A
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1983, 87 (24) : 4919 - 4929
[7] ON THE ROLE OF SURFACE-STATES IN SEMICONDUCTOR ELECTRODE PHOTOELECTROCHEMICAL CELLS
BARD, AJ
FAN, FRF
GIODA, AS
NAGASUBRAMANIAN, G
WHITE, HS
[J]. FARADAY DISCUSSIONS, 1980, 70 : 19 - +
[8] THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES
BARD, AJ
BOCARSLY, AB
FAN, FRF
WALTON, EG
WRIGHTON, MS
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) : 3671 - 3677
[9] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[10] PHOTO-REDUCTION AT ILLUMINATED P-TYPE SEMICONDUCTING SILICON PHOTOELECTRODES - EVIDENCE FOR FERMI LEVEL PINNING
BOCARSLY, AB
BOOKBINDER, DC
DOMINEY, RN
LEWIS, NS
WRIGHTON, MS
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) : 3683 - 3688

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