TRAM - A DESIGN METHODOLOGY FOR HIGH-PERFORMANCE, EASILY TESTABLE, MULTIMEGABIT RAMS

被引:7
作者
JARWALA, NT [1 ]
PRADHAN, DK [1 ]
机构
[1] AT&T BELL LABS,PRINCETON,NJ 08540
基金
美国国家科学基金会;
关键词
MEMORY SELF-TESTING - MULTIMEGABIT DYNAMIC RAM - TRAM ARCHITECTURE - TREE RANDOM ACCESS MEMORY (TRAM);
D O I
10.1109/12.5985
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
引用
收藏
页码:1235 / 1250
页数:16
相关论文
共 50 条
[1]  
ABADIR MS, 1983, COMPUT SURV, V15, P175, DOI 10.1145/356914.356916
[2]  
Annaratone M., 1986, DIGITAL CMOS CIRCUIT
[3]  
BARDELL PH, 1985, P INT TEST C, P352
[4]   A 256K DYNAMIC RANDOM-ACCESS MEMORY [J].
BENEVIT, CA ;
CASSARD, JM ;
DIMMLER, KJ ;
DUMBRI, AC ;
MOUND, MG ;
PROCYK, FJ ;
ROSENZWEIG, W ;
YANOF, AW .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (05) :857-862
[5]  
BILARDI G, 1981, OCT P CMU C VLSI SYS, P81
[6]   FAULT-TOLERANT 64K DYNAMIC RANDOM-ACCESS MEMORY [J].
CENKER, RP ;
CLEMONS, DG ;
HUBER, WR ;
PETRIZZI, JB ;
PROCYK, FJ ;
TROUT, GM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) :853-860
[7]   SURVEY OF HIGH-DENSITY DYNAMIC RAM CELL CONCEPTS [J].
CHATTERJEE, PK ;
TAYLOR, GW ;
EASLEY, RL ;
FU, HS ;
TASCH, AF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) :827-838
[8]  
CHATTERJEE PK, 1978, IEEE IEDM
[9]  
CHATTERJEE PK, 1976, IEEE T ELECTRON DEVI, V26, P564
[10]  
CHAZELLE B, 1981, MODEL COMPUTATION VL