A 256K DYNAMIC RANDOM-ACCESS MEMORY

被引：17

作者：

BENEVIT, CA

CASSARD, JM

DIMMLER, KJ

DUMBRI, AC

MOUND, MG

PROCYK, FJ

ROSENZWEIG, W

YANOF, AW

机构：

[1] BELL TEL LABS INC,DEPT CMOS INTEGRATED CIRCUIT,DIGITAL LINEAR TECHNOL GRP,ALLENTOWN,PA 18103

[2] BELL TEL LABS INC,ADV MEMORY DESIGN & MODELING,ALLENTOWN,PA 18103

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1982年 / 17卷 / 05期

关键词：

D O I：

10.1109/JSSC.1982.1051831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：857 / 862

页数：6

共 9 条

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