OBSERVATIONS ON A METHOD OF DETERMINING CARRIER LIFETIME IN P+-NU-N+ DIODES

被引：27

作者：

BASSETT, RJ

机构：

[1] Westinghouse Brake-English Electric Semiconductors, Ltd., Chippenham, Wilts England

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 05期

关键词：

D O I：

10.1016/0038-1101(69)90094-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In two recent papers, one by Davies(1) and the other by Wilson,(2) results have been given of measurements made by the forward pulsed diode method on silicon p+-ν-n+ diodes. In this paper it is pointed out that the interpretation of the results by Wilson(2) may be in error and an alternative explanation for the low level lifetime" observed is offered. A simple analysis of the alternative model is given and results which support the view that the new model is in fact the one operating in practice are also quoted. © 1969."

引用

页码：385 / &