SPACE-CHARGE ANOMALIES IN INSULATORS CAUSED BY NON-LOCAL IMPACT IONIZATION

被引：11

作者：

RIDLEY, BK

ELELA, FA

机构：

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1989年 / 1卷 / 39期

关键词：

D O I：

10.1088/0953-8984/1/39/013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：7021 / 7031

页数：11

共 15 条

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

[2] CORRECTED VALUES OF FOWLER-NORDHEIM FIELD EMISSION FUNCTIONS V(Y) AND S(Y) [J].

BURGESS, RE ;

KROEMER, H ;

HOUSTON, JM .

PHYSICAL REVIEW, 1953, 90 (04) :515-515

[3] AN ALTERNATIVE EXPRESSION FOR THE IMPACT IONIZATION COEFFICIENT IN A SEMICONDUCTOR DERIVED USING LUCKY DRIFT THEORY [J].

BURT, MG .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (16) :L477-L481

[4] NON-LOCALIZED IMPACT IONIZATION USING A MODIFIED LUCKY DRIFT THEORY [J].

CHILDS, PA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (13) :L243-L247

[5]

ELELA FA, 1989, IN PRESS

[6] THEORY OF HIGH-FIELD ELECTRON-TRANSPORT IN SILICON DIOXIDE [J].

FISCHETTI, MV ;

DIMARIA, DJ ;

BRORSON, SD ;

THEIS, TN ;

KIRTLEY, JR .

PHYSICAL REVIEW B, 1985, 31 (12) :8124-8142

[7]

KELDYSH LV, 1960, ZH EKSP TEOR FIZ, V37, P509

[8] A LUCKY DRIFT MODEL, INCLUDING A SOFT THRESHOLD ENERGY, FITTED TO EXPERIMENTAL MEASUREMENTS OF IONIZATION COEFFICIENTS [J].

MARSLAND, JS .

SOLID-STATE ELECTRONICS, 1987, 30 (01) :125-132

[9] The effect of the image force on the emission and reflexion of electrons by metals [J].

Nordhlim, LW .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 121 (788) :626-639

[10]

OKUTO Y, 1974, PHYS REV, V102, P369

← 1 2 →