JET POLISHING OF SEMICONDUCTORS .2. ELECTROCHEMICALY FORMED TUNNELS IN GAP

被引：28

作者：

CHASE, BD

HOLT, DB

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 03期

关键词：

D O I：

10.1149/1.2404193

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：314 / &

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