APPLICATION OF PREFERENTIAL ELECTROCHEMICAL ETCHING OF SILICON TO SEMICONDUCTOR DEVICE TECHNOLOGY

被引：44

作者：

THEUNISSEN, MJ

APPELS, JA

VERKUYLEN, WH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 07期

关键词：

D O I：

10.1149/1.2407698

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：959 / +

页数：1

相关论文

共 21 条

[1] SILICON-ON-SAPPHIRE COMPLEMENTARY MOS MEMORY CELLS
ALLISON, JF
HEIMAN, FP
BURNS, JR
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1967, SC 2 (04) : 208 - &
[2] APPELS JA, TO BE PUBLISHED
[3] APPELS JA, 1969, MAR IEEE SEM DEV RES
[4] INVESTIGATION OF CHEMICAL PROPERTIES OF STAIN FILMS ON SILICON BY MEANS OF INFRARED SPECTROSCOPY
BECKMANN, KH
[J]. SURFACE SCIENCE, 1965, 3 (04) : 314 - &
[5] BURGER RM, 1967, FUNDAMENTALS SILICON, V1, P429
[6] BURGER RM, 1967, FUNDAMENTALS SILICON, V1, P311
[7] EPITAXIAL GROWTH AND PROPERTIES OF SILICON ON ALUMINA-RICH SINGLE-CRYSTAL SPINEL
CULLEN, GW
GOTTLIEB, GE
WANG, CC
ZAININGER, KH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (10) : 1444 - +
[8] PREPARATION OF THIN SILICON CRYSTALS BY ELECTROCHEMICAL THINNING OF EPITAXIALLY GROWN STRUCTURES
DIJK, HJAV
JONGE, JD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 553 - &
[9] DOWNING W, X62044501 REP AUT
[10] MICROWAVE SILICON SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR
DRANGEID, KE
JAGGI, R
MIDDLEHO.S
MOHR, T
MOSER, A
SASSO, G
SOMMERHALDER, R
WOLF, P
[J]. ELECTRONICS LETTERS, 1968, 4 (17) : 362 - +