SILICON-ON-SAPPHIRE COMPLEMENTARY MOS MEMORY CELLS

[1] BURNS JR, 1964, RCA REV, V25, P627

[2] BURNS JR, 1966, INT SOLIDSTATE CIRCU

[3] DEFORMATION OF AND STRESS IN EPITAXIAL SILICON FILMS ON SINGLE-CRYSTAL SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2700 - &

[4] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[5] HAGON PJ, 1965, AUG WESCON SAN FRANC

[6] HEIMAN FP, 1966, IEEE T, VED13, P855

[7] STABILIZATION OF MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +

[8] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1349 - &

[9] GROWN-FILM SILICON TRANSISTORS ON SAPPHIRE [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1487 - &

[10] RAPP AK, 1967, ISSCC DIGEST, P52

[1] BURNS JR, 1964, RCA REV, V25, P627

[2] BURNS JR, 1966, INT SOLIDSTATE CIRCU

[3] DEFORMATION OF AND STRESS IN EPITAXIAL SILICON FILMS ON SINGLE-CRYSTAL SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2700 - &

[4] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[5] HAGON PJ, 1965, AUG WESCON SAN FRANC

[6] HEIMAN FP, 1966, IEEE T, VED13, P855

[7] STABILIZATION OF MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +

[8] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1349 - &

[9] GROWN-FILM SILICON TRANSISTORS ON SAPPHIRE [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1487 - &

[10] RAPP AK, 1967, ISSCC DIGEST, P52