FABRICATION AND CHARACTERIZATION OF MBE GROWN INAS/GAAS STRAINED-LAYER SUPERLATTICES ON VARIOUSLY ORIENTED SUBSTRATES

被引：9

作者：

KUDO, K ^{[1
]}

LEE, JS ^{[1
]}

TANAKA, K ^{[1
]}

MAKITA, Y ^{[1
]}

YAMADA, A ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91009-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InAs/GaAs strained-layer superlattices (SLSs), grown by molecular-beam epitaxy on variously oriented GaAs substrates, have been investigated. X-ray diffraction and photoluminescence (PL) studies reveal the formation of coherent SLS and microstructures due to the three-dimensional nucleation is strongly dependent on the substrate orientation and the growth parameters. The relationship between PL spectra and growth modes and potential applications of self-aligned microstructures, including quantum pyramids, are described.

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页码：402 / 406

页数：5

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