TRANSPORT PROCESSES AND REDUCTION OF IcRn PRODUCT IN YBa2Cu3Ox/PrB2Cu3Ox/YBa2Cu3Ox RAMP-TYPE JOSEPHSON JUNCTIONS

被引：13

作者：

Boguslayskij, Yu. M. ^{[1
]}

Gao, J. ^{[1
]}

Rijnders, A. J. H. M. ^{[1
]}

Terpstra, D. ^{[1
]}

Gerritsma, G. J. ^{[1
]}

Rogalla, H. ^{[1
]}

机构：

[1] Univ Twente, Fac Appl Phys LT, POB 217, NL-7500 AE Enschede, Netherlands

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

Ceramic materials - Copper oxides - Electron tunneling - Transport properties - Yttrium compounds;

D O I：

10.1109/77.233457

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The mechanisms of the current passage and the reasons of IcRn product reduction of the YBCO/PBCO/YBCO ramp-type junctions are analyzed. At PBCO barrier thicknesses L=8-20 nm the junction characteristics are determined by the thickness of the PBCO barrier and its nature. The boundary resistance and depression of the YBCO superconducting parameters near the interface do not strongly affect the junction parameters. The behavior of the YBCO/PBCO/YBCO junctions can not be described by simple SNS weak-link or SIS tunnel models. A strong pair-breaking effect and an one-center inelastic tunneling process are taken into account to explain the Josephson and normal state characteristics of these junctions.

引用

页码：2034 / 2037

页数：4

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