HETEROEPITAXIAL GROWTH BY VANDERWAALS INTERACTION IN ONE-DIMENSIONAL, 2-DIMENSIONAL AND 3-DIMENSIONAL MATERIALS

被引:67
作者
KOMA, A
UENO, K
SAIKI, K
机构
[1] Department of Chemistry, University of Tokyo, Bunkyo-ku, Tokyo
关键词
D O I
10.1016/0022-0248(91)91126-U
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The lattice matching condition usually encountered in heteroepitaxial growth has been found to be relaxed greatly when the interface between constituent materials has Van der Waals nature and forms no direct chemical bonds. Layered transition metal dichalcogenides are the typical materials having that nature, and a variety of heterostructures can be grown by using them. This kind of approach has been proved to be applied also to heteroepitaxial growth between such quasi-one-dimensional materials as telurium and selenium, that onto dangling-bond terminated three-dimensional material substrates, and that of organic materials forming Van der Waals type crystals.
引用
收藏
页码:1029 / 1032
页数:4
相关论文
共 15 条
  • [1] Aoto, 1983, 15TH C SOL STAT DEV, P309
  • [2] ULTRASHARP INTERFACES GROWN WITH VANDERWAALS EPITAXY
    KOMA, A
    YOSHIMURA, K
    [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 556 - 560
  • [3] FABRICATION OF ULTRATHIN HETEROSTRUCTURES WITH VANDERWAALS EPITAXY
    KOMA, A
    SUNOUCHI, K
    MIYAJIMA, T
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 724 - 724
  • [4] Koma A., 1984, Microelectronic Engineering, V2, P129, DOI 10.1016/0167-9317(84)90057-1
  • [5] HETEROEPITAXY OF A TWO-DIMENSIONAL MATERIAL ON A 3-DIMENSIONAL MATERIAL
    KOMA, A
    SAIKI, K
    SATO, Y
    [J]. APPLIED SURFACE SCIENCE, 1989, 41-2 : 451 - 456
  • [6] KOMA A, 1985, 17TH P INT C PHYS SE, P1465
  • [7] KOMA A, 1989, 1ST P INT C EL MAT T, P105
  • [8] LEE HC, 1987, JPN J APPL PHYS, V26, pL1734
  • [9] VANDERWAALS EPITAXIAL-GROWTH AND CHARACTERIZATION OF MOSE2 THIN-FILMS ON SNS2
    OHUCHI, FS
    PARKINSON, BA
    UENO, K
    KOMA, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) : 2168 - 2175
  • [10] STUDIES ON AN (NH4)2SX-TREATED GAAS SURFACE USING AES, LEELS AND RHEED
    OIGAWA, H
    FAN, JF
    NANNICHI, Y
    ANDO, K
    SAIKI, K
    KOMA, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (03): : L340 - L342