STUDIES ON AN (NH4)2SX-TREATED GAAS SURFACE USING AES, LEELS AND RHEED

被引：87

作者：

OIGAWA, H ^{[1
]}

FAN, JF ^{[1
]}

NANNICHI, Y ^{[1
]}

ANDO, K ^{[1
]}

SAIKI, K ^{[1
]}

KOMA, A ^{[1
]}

机构：

[1] UNIV TOKYO, DEPT CHEM, BUNKYO KU, TOKYO 113, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 03期

关键词：

D O I：

10.1143/JJAP.28.L340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L340 / L342

页数：3

共 8 条

[1] METAL-DEPENDENT SCHOTTKY-BARRIER HEIGHT WITH THE (NH4)2SX-TREATED GAAS
FAN, JF
OIGAWA, H
NANNICHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2125 - L2127
[2] THE EFFECT OF (NH4)2S TREATMENT ON THE INTERFACE CHARACTERISTICS OF GAAS MIS STRUCTURES
FAN, JF
OIGAWA, H
NANNICHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (07): : L1331 - L1333
[3] MONO-CRYSTALLINE ALUMINUM OHMIC CONTACT TO N-GAAS BY H2S ADSORPTION
MASSIES, J
CHAPLART, J
LAVIRON, M
LINH, NT
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 693 - 695
[4] A MODEL TO EXPLAIN THE EFFECTIVE PASSIVATION OF THE GAAS SURFACE BY (NH4)2SX TREATMENT
NANNICHI, Y
FAN, JF
OIGAWA, H
KOMA, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12): : L2367 - L2369
[5] OIGAWA H, 1988, 20TH C SOL STAT DEV, P263
[6] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION
SANDROFF, CJ
NOTTENBURG, RN
BISCHOFF, JC
BHAT, R
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 33 - 35
[7] NEARLY IDEAL ELECTRONIC-PROPERTIES OF SULFIDE COATED GAAS-SURFACES
YABLONOVITCH, E
SANDROFF, CJ
BHAT, R
GMITTER, T
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 439 - 441
[8] YOSHIMURA K, 1988, 16TH C SOL STAT DEV, P293