A MODEL TO EXPLAIN THE EFFECTIVE PASSIVATION OF THE GAAS SURFACE BY (NH4)2SX TREATMENT

被引：178

作者：

NANNICHI, Y ^{[1
]}

FAN, JF ^{[1
]}

OIGAWA, H ^{[1
]}

KOMA, A ^{[1
]}

机构：

[1] UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 12期

关键词：

D O I：

10.1143/JJAP.27.L2367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2367 / L2369

页数：3

共 7 条

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APPLIED PHYSICS LETTERS, 1988, 52 (25) :2157-2159

[2] SCHOTTKY-BARRIER FORMATION ON (NH4)2S-TREATED N-TYPE AND P-TYPE (100)GAAS [J].

CARPENTER, MS ;

MELLOCH, MR ;

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APPLIED PHYSICS LETTERS, 1988, 53 (01) :66-68

[3] METAL-DEPENDENT SCHOTTKY-BARRIER HEIGHT WITH THE (NH4)2SX-TREATED GAAS [J].

FAN, JF ;

OIGAWA, H ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2125-L2127

[4] THE EFFECT OF (NH4)2S TREATMENT ON THE INTERFACE CHARACTERISTICS OF GAAS MIS STRUCTURES [J].

FAN, JF ;

OIGAWA, H ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (07) :L1331-L1333

[5]

OIGAWA H, 1988, 20TH C SOL STAT DEV, P263

[6] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION [J].

SANDROFF, CJ ;

NOTTENBURG, RN ;

BISCHOFF, JC ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :33-35

[7] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].

SPICER, WE ;

CHYE, PW ;

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SU, CY ;

LINDAU, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1422-1433

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