SCHOTTKY-BARRIER FORMATION ON (NH4)2S-TREATED N-TYPE AND P-TYPE (100)GAAS

被引：159

作者：

CARPENTER, MS

MELLOCH, MR

DUNGAN, TE

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 01期

关键词：

D O I：

10.1063/1.100572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：66 / 68

页数：3

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