CHEMICAL VAPOR-DEPOSITION OF CU FILM ON SIO2 USING CYCLOPENTADIENYLCOPPERTRIETHYLPHOSPHINE

被引：10

作者：

CHICHIBU, S ^{[1
]}

YOSHIDA, N ^{[1
]}

HIGUCHI, H ^{[1
]}

MATSUMOTO, S ^{[1
]}

机构：

[1] BENTEC CORP, TACHIKAWA, TOKYO 190, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 12B期

关键词：

CU-CVD; CYCLOPENTADIENYLCOPPER TRIETHYLPHOSPHINE; METALLIZATION TECHNIQUE; METALORGANIC PRECURSOR; PYROLYSIS;

D O I：

10.1143/JJAP.31.L1778

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chemical vapor deposition of Cu film on SiO2 has been studied using cyclopentadienylcoppertriethylphosphine (C5H5CUP(C2H5)3), which contains no oxygen atom itself. The deposited Cu films had complete (111) preferred orientation for deposition temperatures below 450-degrees-C. From Auger electron spectroscopy measurements, no simultaneous incorporation of oxygen during the deposition has been confirmed. Relatively low temperature deposition is preferable to reduce the condensation of deposited Cu.

引用

页码：L1778 / L1780

页数：3

共 21 条

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