HEAVILY SI-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TERTIARYBUTYLARSINE AND SILANE

被引：27

作者：

CHICHIBU, S ^{[1
]}

IWAI, A ^{[1
]}

MATSUMOTO, S ^{[1
]}

HIGUCHI, H ^{[1
]}

机构：

[1] BENTEC CORP,SHINJUKU KU,TOKYO 160,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 04期

关键词：

D O I：

10.1063/1.106645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heavy Si doping was studied for low-pressure metalorganic chemical vapor deposition of GaAs by using tertiarybutylarsine (tBAs) as a group-V source and silane (SiH4) as a doping source gas. The Si doping efficiency was higher by one order of magnitude when tBAs was used instead of arsine (AsH3). The maximum electron concentration was 9.0 x 10(18) cm-3, which is slightly higher than that obtained for AsH3 (5.9 x 10(18) cm-3). The slight increase of the maximum concentration is considered to be due to a reduction of the carrier compensating center generated in high SiH4 partial pressure conditions. Generation of the electrical compensating center is assigned to be related with the carbon incorporation from alkylsilanes during growth.

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页码：489 / 491

页数：3

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