HEAVILY SI-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：24

作者：

FURUHATA, N

KAKIMOTO, K

YOSHIDA, M

KAMEJIMA, T

机构：

[1] NEC CORP, FUNDAMENTAL RES LABS, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN

[2] NEC CORP, RESOURCE & ENVIRONM PROTECT RES LABS, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.341253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4692 / 4695

页数：4

共 18 条

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