ALGAAS/GAAS AND ALGAAS/INGAAS/GAAS HIGH ELECTRON-MOBILITY TRANSISTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLARSINE

We demonstrate the first fabrication of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors (HEMTs) grown by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (tBAs) on 3-inch GaAs substrates. In the drain current-voltage characteristics, sharp pinch-off and excellent saturation were observed for HEMTs grown using tBAs as well as using arsine. A transconductance of 324 mS/mm and the K-factor of 418 mA/V2/mm were obtained using tBAs for n-AlGaAs/GaAs HEMTs with a 0.5-mu-m gate, while those for n-AlGaAs/InGaAs/GaAs pseudomorphic HEMTs were 350 mS/mm and 480 mA/V2/mm. These results verify that GaAs, AlGaAs, and InGaAs layers grown using tBAs are of sufficiently high quality for HEMT applications.