BH LASERS WITH GAINASP AND GAINAS ACTIVE LAYERS GROWN BY MOVPE USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE

被引：19

作者：

DUNCAN, WJ

BAKER, DM

HARLOW, M

ENGLISH, A

BURNESS, AL

HAIGH, J

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 23期

关键词：

D O I：

10.1049/el:19891076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1603 / 1604

页数：2

共 7 条

[1] HIGH-QUALITY GAINAS PHOTODIODES GROWN USING TERTIARYBUTYLARSINE BY ATMOSPHERIC-PRESSURE MOVPE [J].

BAKER, DM ;

DUNCAN, WJ ;

LEARMOUTH, MD ;

LYNCH, TG .

ELECTRONICS LETTERS, 1989, 25 (23) :1598-1600

[2] HIGH-PERFORMANCE, HIGH-RELIABILITY BURIED HETEROSTRUCTURE LASERS BY MOVPE [J].

COOPER, DM ;

COLE, S ;

DEVLIN, WJ ;

HOBBS, RE ;

NELSON, AW ;

REGNAULT, JC ;

SKEATS, AP ;

SIM, SP ;

SPURDENS, PC .

ELECTRONICS LETTERS, 1988, 24 (09) :519-521

[3] VAPOR SOLID DISTRIBUTION RELATION IN MOCVD GAASXP1-X AND INASXP1-X [J].

FUKUI, T ;

KOBAYASHI, N .

JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) :9-11

[4] BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION [J].

MOON, RL ;

ANTYPAS, GA ;

JAMES, LW .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (03) :635-644

[5] ALLOYING MECHANISMS IN MOVPE GAAS1-XPX [J].

SAMUELSON, L ;

OMLING, P ;

GRIMMEISS, HG .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :425-426

[6] THERMODYNAMIC ANALYSIS OF METALORGANIC VAPOR-PHASE EPITAXY OF III-V ALLOY SEMICONDUCTORS [J].

SEKI, H ;

KOUKITU, A .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (01) :172-180

[7] NON-HYDRIDE GROUP-V SOURCES FOR OMVPE [J].

STRINGFELLOW, GB .

JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) :327-335

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