HIGH-PERFORMANCE, HIGH-RELIABILITY BURIED HETEROSTRUCTURE LASERS BY MOVPE

被引：10

作者：

COOPER, DM

COLE, S

DEVLIN, WJ

HOBBS, RE

NELSON, AW

REGNAULT, JC

SKEATS, AP

SIM, SP

SPURDENS, PC

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 09期

关键词：

D O I：

10.1049/el:19880351

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：519 / 521

页数：3

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[1] VERY LOW THRESHOLD PLANAR BURIED HETEROSTRUCTURE INGAASP/INP LASER-DIODES PREPARED BY 3-STAGE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

ISHIGURO, H ;

KAWABATA, T ;

KOIKE, S .

APPLIED PHYSICS LETTERS, 1987, 51 (12) :874-876

[2] LOW-THRESHOLD OPERATION OF 1.5 MU-M BURIED-HETEROSTRUCTURE DFB LASERS GROWN ENTIRELY BY LOW-PRESSURE MOVPE [J].

ITAYA, Y ;

OISHI, M ;

NAKAO, M ;

SATO, K ;

KONDO, Y ;

IMAMURA, Y .

ELECTRONICS LETTERS, 1987, 23 (05) :193-194

[3] HIGH-POWER, LOW-THRESHOLD BH LASERS OPERATING AT 1.52-MUM GROWN ENTIRELY BY MOVPE [J].

NELSON, AW ;

DEVLIN, WJ ;

HOBBS, RE ;

LENTON, CGD ;

WONG, S .

ELECTRONICS LETTERS, 1985, 21 (20) :888-889