VERY LOW THRESHOLD PLANAR BURIED HETEROSTRUCTURE INGAASP/INP LASER-DIODES PREPARED BY 3-STAGE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：7

作者：

ISHIGURO, H

KAWABATA, T

KOIKE, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 12期

关键词：

D O I：

10.1063/1.98840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：874 / 876

页数：3

共 6 条

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ELECTRONICS LETTERS, 1981, 17 (17) :606-608

[2] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[3] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J].

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SIMPSON, WI .

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[4] INGAASP PLANAR BURIED HETEROSTRUCTURE LASER DIODE (PBH-LD) WITH VERY LOW THRESHOLD CURRENT [J].

MITO, I ;

KITAMURA, M ;

KAEDE, K ;

ODAGIRI, Y ;

SEKI, M ;

SUGIMOTO, M ;

KOBAYASHI, K .

ELECTRONICS LETTERS, 1982, 18 (01) :2-3

[5]

Nagashima M., 1986, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE69, P92

[6] 1.2-1.6-MU-M GAXIN1-XASYP1-Y-INP DH LASERS GROWN BY LPMOCVD [J].

RAZEGHI, M ;

DECREMOUX, B ;

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JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :389-397

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