CONTROL OF RESIDUAL IMPURITY INCORPORATION IN TERTIARYBUTYLARSINE-GROWN GAAS

被引：24

作者：

HAACKE, G

WATKINS, SP

BURKHARD, H

机构：

[1] American Cyanamid Company, Chemical Research Division, Stamford

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90481-J

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Metalorganic chemical vapor deposition was used to grow unintentionally doped GaAs epitaxial layers and compare the properties of arsine- and tertiarybutylarsine-grown layers. Nearly identical electrical transport properties were found when the gallium source was triethylgallium. For both arsenic sources, layers grown at 76 Torr pressure had residual donor/acceptor concentrations in the 10(13)-10(14) cm-3 range and 77 K mobilities up to 160,000 cm2/V.s.

引用

页码：342 / 347

页数：6

共 22 条

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