INVESTIGATION OF CARBON INCORPORATION IN GAAS USING C-13-ENRICHED TRIMETHYLARSENIC AND (CH4)-C-13

被引：64

作者：

LUM, RM ^{[1
]}

KLINGERT, JK ^{[1
]}

KISKER, DW ^{[1
]}

TENNANT, DM ^{[1
]}

MORRIS, MD ^{[1
]}

MALM, DL ^{[1
]}

KOVALCHICK, J ^{[1
]}

HEIMBROOK, LA ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 02期

关键词：

D O I：

10.1007/BF02652137

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：101 / 104

页数：4

共 15 条

[1] THE ROLE OF CH4 IN METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION OF GAAS
ARENS, G
LUTH, H
HEYEN, M
BALK, P
[J]. THIN SOLID FILMS, 1986, 136 (02) : 281 - 287
[2] GROWTH OF HIGH-QUALITY GAAS USING TRIMETHYLGALLIUM AND DIETHYLARSINE
BHAT, R
KOZA, MA
SKROMME, BJ
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1194 - 1196
[3] METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH AND CHARACTERIZATION OF GAAS
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MINER, C
EMMERSTORFER, B
SPRINGTHORPE, AJ
GALLANT, M
[J]. CANADIAN JOURNAL OF PHYSICS, 1985, 63 (06) : 664 - 669
[4] USE OF TERTIARYBUTYLARSINE FOR GAAS GROWTH
CHEN, CH
LARSEN, CA
STRINGFELLOW, GB
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 218 - 220
[5] IMPROVED MOBILITY IN OM-VPE-GROWN GA1-XINXAS
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LUDOWISE, MJ
COOPER, CB
[J]. ELECTRONICS LETTERS, 1981, 17 (19) : 698 - 699
[6] GAAS METAL ORGANICS VAPOR-PHASE EPITAXY - RESIDUAL CARBON
ELJANI, B
LEROUX, M
GRENET, JC
GIBART, P
[J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 303 - 310
[7] MECHANISM OF CARBON INCORPORATION IN MOCVD GAAS
KUECH, TF
VEUHOFF, E
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 148 - 156
[8] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY
LEYS, MR
VEENVLIET, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 145 - 153
[9] AN INTEGRATED LABORATORY-REACTOR MOCVD SAFETY SYSTEM
LUM, RM
KLINGERT, JK
DUTT, BV
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (03) : 421 - 428
[10] USE OF TERTIARYBUTYLARSINE IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS
LUM, RM
KLINGERT, JK
LAMONT, MG
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (05) : 284 - 286

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