AN INTEGRATED LABORATORY-REACTOR MOCVD SAFETY SYSTEM

被引：17

作者：

LUM, RM

KLINGERT, JK

DUTT, BV

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 75卷 / 03期

关键词：

D O I：

10.1016/0022-0248(86)90084-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：421 / 428

页数：8

共 8 条

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[2]

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[3] A MOCVD REACTOR SAFETY SYSTEM FOR A PRODUCTION ENVIRONMENT [J].

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MELLEN, N ;

CURLESS, J .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :497-501

[4] METALORGANIC INP AND INXGA1-XASYP1-Y ON INP EPITAXY AT ATMOSPHERIC-PRESSURE [J].

MIRCEA, A ;

AZOULAY, R ;

DUGRAND, L ;

MELLET, R ;

RAO, K ;

SACILOTTI, M .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (03) :603-620

[5]

Swaminathan V., 1984, Materials Letters, V2, P308, DOI 10.1016/0167-577X(84)90040-5

[6]

1984, J CRYSTAL GROWTH, V68, P1

[7]

1983, 1ST BIENN OMVPE WORK

[8]

1984, AM C GOVT IND HYGIEN, P22

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