A MOCVD REACTOR SAFETY SYSTEM FOR A PRODUCTION ENVIRONMENT

被引:9
作者
JOHNSON, E
TSUI, R
CONVEY, D
MELLEN, N
CURLESS, J
机构
关键词
D O I
10.1016/0022-0248(84)90456-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:497 / 501
页数:5
相关论文
共 4 条
[1]   DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J].
BASS, SJ .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :172-178
[2]  
BRAKER W, 1979, EFFECTS EXPOSURE TOX, P76
[3]  
MACKINSON FW, 1978, DHEW NIOSH78210 PUBL, P48
[4]   STUDIES OF GAAS AND ALGAAS LAYERS GROWN BY OM-VPE [J].
SAXENA, RR ;
COOPER, CB ;
LUDOWISE, MJ ;
HIKIDO, S ;
SARDI, VM ;
BORDEN, PG .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :58-63