IMPROVED MOBILITY IN OM-VPE-GROWN GA1-XINXAS

[1] GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 683 - 687

[2] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178

[3] THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 185 - 192

[4] COOPER JB, 1980, ELECTRON LETT, V16, P20

[5] GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 839 - 841

[6] ELECTRON-MOBILITY IN INXGA1-XAS ALLOYS [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1621 - 1626

[7] GROWTH OF GA0.47IN0.53AS ON INP BY LOW-PRESSURE MO CVD [J]. ELECTRONICS LETTERS, 1980, 16 (11) : 415 - 416

[8] HYDER SB, 1976, J ELECTROCHEM SOC, V123, P1502

[9] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .5. FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 135 - 137

[10] THE PREPARATION OF GA1-XINXAS BY ORGANOMETALLIC PYROLYSIS FOR HOMOJUNCTION LEDS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) : 601 - 620

[1] GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 683 - 687

[2] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178

[3] THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 185 - 192

[4] COOPER JB, 1980, ELECTRON LETT, V16, P20

[5] GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 839 - 841

[6] ELECTRON-MOBILITY IN INXGA1-XAS ALLOYS [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1621 - 1626

[7] GROWTH OF GA0.47IN0.53AS ON INP BY LOW-PRESSURE MO CVD [J]. ELECTRONICS LETTERS, 1980, 16 (11) : 415 - 416

[8] HYDER SB, 1976, J ELECTROCHEM SOC, V123, P1502

[9] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .5. FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 135 - 137

[10] THE PREPARATION OF GA1-XINXAS BY ORGANOMETALLIC PYROLYSIS FOR HOMOJUNCTION LEDS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) : 601 - 620