USE OF TERTIARYBUTYLARSINE IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS

被引：95

作者：

LUM, RM ^{[1
]}

KLINGERT, JK ^{[1
]}

LAMONT, MG ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.98226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：284 / 286

页数：3

共 20 条

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