REDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES

被引：57

作者：

KUECH, TF

POTEMSKI, R

机构：

来源：

关键词：

D O I：

10.1063/1.95995

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：821 / 823

页数：3

共 14 条

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[4] HEINECKE H, 1984, J ELECTRON MATER, V13, P815, DOI 10.1007/BF02657928
[5] DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY METALORGANICS METHOD
KEIL, G
LEMETAYER, M
CUQUEL, A
LEPOLLOTEC, D
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[6] KOBAYASHI N, 1984, ELECTRON LETT, V20, P887, DOI 10.1049/el:19840602
[7] MECHANISM OF CARBON INCORPORATION IN MOCVD GAAS
KUECH, TF
VEUHOFF, E
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 148 - 156
[8] CHARACTERIZATION OF SILICON IMPLANTED GAAS BUFFER LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KUECH, TF
POTEMSKI, R
CHAPPELL, TI
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1196 - 1203
[9] MELAS A, COMMUNICATION
[10] REDUCED PRESSURE MOVPE GROWTH AND CHARACTERIZATION OF GAAS/GAALAS HETEROSTRUCTURES USING A TRIETHYLGALLIUM SOURCE
NORRIS, P
BLACK, J
ZEMON, S
LAMBERT, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 437 - 444