CHARACTERIZATION OF SILICON IMPLANTED GAAS BUFFER LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：7

作者：

KUECH, TF

POTEMSKI, R

CHAPPELL, TI

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 03期

关键词：

D O I：

10.1063/1.336137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1196 / 1203

页数：8

共 41 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2]

BEDAIR SM, 1984, JUN EL MAT C SANT BA

[3] TREND OF DEEP STATES IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GAAS WITH VARYING AS-GA RATIOS [J].

BHATTACHARYA, PK ;

KU, JW ;

OWEN, SJT ;

AEBI, V ;

COOPER, CB ;

MOON, RL .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :304-306

[4]

COX HM, 1977, I PHYS C SER B, V33, P236

[5] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J].

DAPKUS, PD ;

MANASEVIT, HM ;

HESS, KL ;

LOW, TS ;

STILLMAN, GE .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :10-23

[6] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J].

DILORENZO, JV .

JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :189-+

[7]

EFFER D, 1964, J ELECTROCHEM SOC, V112, P1020

[8]

EISEN F, 1982, GAAS FET PRINCIPLES, P124

[9]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[10] CAPLESS ANNEALING OF SILICON IMPLANTED GALLIUM-ARSENIDE [J].

GRANGE, JD ;

WICKENDEN, DK .

SOLID-STATE ELECTRONICS, 1983, 26 (04) :313-317

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