CAPLESS ANNEALING OF SILICON IMPLANTED GALLIUM-ARSENIDE

被引：11

作者：

GRANGE, JD

WICKENDEN, DK

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 04期

关键词：

D O I：

10.1016/0038-1101(83)90129-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：313 / 317

页数：5

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