AUTOMATIC ELECTROCHEMICAL PROFILING OF HALL-MOBILITY IN SEMICONDUCTORS

被引：13

作者：

AMBRIDGE, T

ALLEN, CJ

机构：

[1] Post Office Research Centre, Ipswich IPS 7RE, Martlesham Heath

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 20期

关键词：

Electrochemical profiling; Gallium arsenide; Hall mobility; Schottky-barrier junctions;

D O I：

10.1049/el:19790461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-resolution automatic profiling of Hall mobility in semiconductors is achieved through the use of an electrolytic contact, both as a Schottky gate and as a means of controlled dissolution. Application to multilayer m.b.e. GaAs is shown as an example. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：648 / 650

页数：3

共 7 条

[1] AUTOMATIC ELECTROCHEMICAL PROFILING OF CARRIER CONCENTRATION IN INDIUM-PHOSPHIDE
AMBRIDGE, T
ASHEN, DJ
[J]. ELECTRONICS LETTERS, 1979, 15 (20) : 647 - 648
[2] AMBRIDGE T, UNPUBLISHED
[3] MOBILITY PROFILING OF FET STRUCTURES
JAY, PR
CROSSLEY, I
CARDWELL, MJ
[J]. ELECTRONICS LETTERS, 1978, 14 (06) : 190 - 191
[4] ANODIC-OXIDATION OF GAAS AS A TECHNIQUE TO EVALUATE ELECTRICAL CARRIER CONCENTRATION PROFILES
MULLER, H
EISEN, FH
MAYER, JW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 651 - 655
[5] THEORY OF ELECTTON GALVANOMAGNETICS IN CRYSTALS - HALL EFFECT IN SEMICONDUCTORS AND SEMIMETALS
RODE, DL
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 55 (02): : 687 - 696
[6] ELECTROCHEMICAL CARRIER CONCENTRATION PROFILING IN SILICON
SHARPE, CD
LILLEY, P
ELLIOTT, CR
AMBRIDGE, T
[J]. ELECTRONICS LETTERS, 1979, 15 (20) : 622 - 624
[7] AC PROFILING BY SCHOTTKY GATED CLOVERLEAF
TANSLEY, TL
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1975, 8 (01): : 52 - 54

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