AC PROFILING BY SCHOTTKY GATED CLOVERLEAF

[1] CAHEN O, 1970, P EUROP C ION IMPLAN, P192

[2] CLARK AH, 1968, T METALL SOC AIME, V242, P1173

[3] DAVIDSON SM, 1971, 2 P INT C ION IMPL G, V2, P79

[4] INVESTIGATION OF CARRIER TRANSPORT IN THIN SILICON-ON-SAPPHIRE FILMS USING MIS DEEP DEPLETION HALL-EFFECT STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (05) : 531 - +

[5] VARIATIONS IN ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1972, 20 (01) : 1 - &

[6] Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8

[7] ANODIC FORMATION OF OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) : 230 - 236

[8] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[1] CAHEN O, 1970, P EUROP C ION IMPLAN, P192

[2] CLARK AH, 1968, T METALL SOC AIME, V242, P1173

[3] DAVIDSON SM, 1971, 2 P INT C ION IMPL G, V2, P79

[4] INVESTIGATION OF CARRIER TRANSPORT IN THIN SILICON-ON-SAPPHIRE FILMS USING MIS DEEP DEPLETION HALL-EFFECT STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (05) : 531 - +

[5] VARIATIONS IN ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1972, 20 (01) : 1 - &

[6] Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8

[7] ANODIC FORMATION OF OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) : 230 - 236

[8] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1