HIGH-TEMPERATURE MOVPE GROWTH OF GAAS/ALGAAS DEVICE STRUCTURES WITH TERTIARY-BUTYLARSINE

The performance characteristics of epitaxial structures suitable for optoelectronic and electronic devices were investigated. These were fabricated by MOVPE using tertiary-butylarsine, a non-hydride arsenic source. Minority carrier diffusion lengths of 5 μm at 3 × 1018/cm3 and 2 μm at 2 × 1019/cm3 were achieved in p-type GaAs. Recombination velocities at the GaAs/AlGaAs interface are reduced to 1 × 103 cm/sec by processing under appropriate conditions. Electron mobilities of 4000 cm2/V-sec in n-type (2 × 1017/cm3) layers resulted in transconductances of 120 mS/mm in 1.5 μm gate depletion mode MESFETs. The above values are comparable to those obtained with arsine in this work and others reported in the literature. © 1990 The Mineral,Metal & Materials Society,Inc.