TERTIARY BUTYLARSINE GROWN GAAS SOLAR-CELL

被引：25

作者：

SUNDARAM, VS

ARAU, BA

AVERY, JE

BAILEY, AL

GIRARD, GR

HAGER, HE

THOMPSON, AG

FRAAS, LM

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 07期

关键词：

D O I：

10.1063/1.100883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：671 / 673

页数：3

共 10 条

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[2] GAAS FILMS GROWN BY VACUUM CHEMICAL EPITAXY USING THERMALLY PRECRACKED TRIMETHYL-ARSENIC [J].

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PARTAIN, LD ;

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[3] OMVPE GROWTH OF GAINAS [J].

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[4] COMPARISON OF ALTERNATE AS-SOURCES TO ARSINE IN THE MOCVD GROWTH OF GAAS [J].

LUM, RM ;

KLINGERT, JK ;

LAMONT, MG .

JOURNAL OF CRYSTAL GROWTH, 1988, 89 (01) :137-142

[5] USE OF TERTIARYBUTYLARSINE IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS [J].

LUM, RM ;

KLINGERT, JK ;

LAMONT, MG .

APPLIED PHYSICS LETTERS, 1987, 50 (05) :284-286

[6]

OMSTEAD TR, IN PRESS J CRYST GRO

[7]

Sahai R., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P946

[8]

SITTING M, 1981, HDB TOXIC HAZARDOUS, P61

[9]

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[10]

1988, 3 AM CYAN CO APPL NO

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