OMVPE GROWTH OF GAINAS

[1] BALIGA BJ, 1976, J ELECTROCHEM SOC, V122, P684

[2] THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 185 - 192

[3] BHAT R, 1982, P SOC PHOTO-OPT INST, V323, P104, DOI 10.1117/12.934283

[4] BROWN AS, 1983, ELECTRONIC MATERIALS

[5] A SIMPLIFIED TECHNIQUE FOR MOCVD OF III-V-COMPOUNDS [J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 491 - 503

[6] ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) : 299 - 309

[7] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 10 - 23

[8] Duchemin J.-P., 1981, INST PHYS CONF SE, V63, P89

[9] GAINAS AND GAINASP MATERIALS GROWN BY LOW-PRESSURE MOCVD FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 64 - 73

[10] FUKUI T, 1975, JAPAN J APPL PHYS, V18, P2157

[1] BALIGA BJ, 1976, J ELECTROCHEM SOC, V122, P684

[2] THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 185 - 192

[3] BHAT R, 1982, P SOC PHOTO-OPT INST, V323, P104, DOI 10.1117/12.934283

[4] BROWN AS, 1983, ELECTRONIC MATERIALS

[5] A SIMPLIFIED TECHNIQUE FOR MOCVD OF III-V-COMPOUNDS [J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 491 - 503

[6] ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) : 299 - 309

[7] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 10 - 23

[8] Duchemin J.-P., 1981, INST PHYS CONF SE, V63, P89

[9] GAINAS AND GAINASP MATERIALS GROWN BY LOW-PRESSURE MOCVD FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 64 - 73

[10] FUKUI T, 1975, JAPAN J APPL PHYS, V18, P2157