LOW-ENERGY ION-IMPLANTATION AND ITS CHARACTERIZATION AND PROCESSING

Low energy implants from 20 keV down to 1 keV (with an effective boron energy as low as 225 eV), have been characterized on commercially available implanters. Wafer sizes up to 200 mm have been included. The effects of different modes of operation, such as decel (with various extraction voltages) and drift/extraction mode, on the quality and throughput have been investigated. Both as implanted and annealed SIMS profiles have been obtained. Comparisons are made between RTP and furnace annealing, as well as between various implant measurement techniques such as Therma-Wave and Prometrix. The effects of other processing and physical phenomena will be discussed or presented, i.e., channeling, pre-amorphization, neutrals, point defect formation and enhanced diffusion. Key issues for ultra low energy ion implantation requirements (less-than-or-equal-to 2 keV) are discussed.