EFFECTS OF ELECTRON IRRADIATION ON THERMAL CONDUCTIVITY OF N- AND P-TYPE GERMANIUM

被引：7

作者：

ALBANY, HJ

VANDEVYVER, M

机构：

来源：

PHYSICAL REVIEW | 1967年 / 160卷 / 03期

关键词：

D O I：

10.1103/PhysRev.160.633

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：633 / +

页数：1

共 28 条

[1] LOW-TEMPERATURE THERMAL CONDUCTIVITY OF FAST-NEUTRON-IRRADIATED SILICON AND GERMANIUM [J].

ALBANY, HJ ;

VANDEVYV.M .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) :425-+

[2] MODEL FOR LATTICE THERMAL CONDUCTIVITY AT LOW TEMPERATURES [J].

CALLAWAY, J .

PHYSICAL REVIEW, 1959, 113 (04) :1046-1051

[3] THE THERMAL CONDUCTIVITY OF GERMANIUM AND SILICON BETWEEN 2-DEGREES-K AND 300-DEGREES-K [J].

CARRUTHERS, JA ;

GEBALLE, TH ;

ROSENBERG, HM ;

ZIMAN, JM .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 238 (1215) :502-514

[4] THEORY OF THERMAL CONDUCTIVITY OF SOLIDS AT LOW TEMPERATURES [J].

CARRUTHERS, P .

REVIEWS OF MODERN PHYSICS, 1961, 33 (01) :92-138

[5] Note on the conduction of heat in crystals [J].

Casimir, HBG .

PHYSICA, 1938, 5 :495-500

[6] COMPENSATION DEPENDENCE OF IMPURITY CONDUCTION IN ANTIMONY-DOPED GERMANIUM [J].

DAVIS, EA ;

COMPTON, WD .

PHYSICAL REVIEW, 1965, 140 (6A) :2183-&

[7] EFFECT OF UNIAXIAL COMPRESSION ON IMPURITY CONDUCTION IN N-TYPE GERMANIUM [J].

FRITZCHE, H .

PHYSICAL REVIEW, 1962, 125 (05) :1552-&

[8] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J].

GLASSBRENNER, CJ ;

SLACK, GA .

PHYSICAL REVIEW, 1964, 134 (4A) :1058-+

[9]

GOFF JF, 1965, PHYS REV, V140, P2151

[10]

GOFF JF, 1961, 7 P INT C LOW TEMP P, P284

← 1 2 3 →