GAAS1-XPX AS A NEW HIGH QUANTUM YIELD PHOTOEMISSIVE MATERIAL FOR VISIBLE SPECTRUM

被引：17

作者：

SIMON, RE

SOMMER, AH

TIETJEN, JJ

WILLIAMS, BF

机构：

[1] RCA Electronic Components, Lancaster

[2] RCA Laboratories, Princeton

[3] RCA Electronic Components, Princeton

来源：

APPLIED PHYSICS LETTERS | 1969年 / 15卷 / 02期

关键词：

D O I：

10.1063/1.1652892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new photocathode having high quantum yield for visible and ultraviolet radiation is reported. The cathode consists of a cesium-activated strongly p-type doped GaAs1-xPx alloy. © 1969 The American Institute of Physics.

引用

页码：43 / +

页数：1

共 4 条

[1] GaAs-Cs: A NEW TYPE OF PHOTOEMITTER
Scheer, J. J.
van Laar, J.
[J]. SOLID STATE COMMUNICATIONS, 1965, 3 (08) : 189 - 193
[2] SECONDARY-ELECTRON EMISSION
SIMON, RE
WILLIAMS, BF
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (03) : 167 - +
[3] NEW HIGH-GAIN DYNODE FOR PHOTOMULTIPLIERS
SIMON, RE
SOMMER, AH
TIETJEN, JJ
WILLIAMS, BF
[J]. APPLIED PHYSICS LETTERS, 1968, 13 (10) : 355 - +
[4] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE
TIETJEN, JJ
AMICK, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 724 - &

← 1 →