TRANSMISSION ELECTRON-MICROSCOPE OBSERVATIONS ON GAP ELECTROLUMINESCENT DIODE MATERIALS

被引：10

作者：

CHASE, BD

HOLT, DB

机构：

来源：

关键词：

D O I：

10.1007/BF00555627

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：265 / &

共 37 条

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[3] TWINS AND STACKING FAULTS IN VAPOR GROWN GAAS
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[4] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
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[5] AMELINCKX S, 1964, SOL STATE PHYS S6
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[7] DECORATED DISLOCATIONS AND SUB-SURFACE DEFECTS INDUCED IN GAAS BY IN-DIFFUSION OF ZINC
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[8] CRYSTALLOGRAPHIC IMPERFECTIONS IN SILICON
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[9] Calverley A., 1970, Solid-State Electronics, V13, P382, DOI 10.1016/0038-1101(70)90189-9
[10] CHASE BD, TO BE PUBLISHED