AC MEASUREMENTS OF HALL CONSTANT IN METALLIC OXIDES

被引:3
作者
PERLUZZO, G
YAHIA, J
机构
关键词
D O I
10.1139/p72-189
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1379 / &
相关论文
共 8 条
[1]  
BOGOMOLOV VN, 1968, FIZ TVERD TELA+, V9, P2502
[2]   ELECTRICAL PROPERTIES OF TITANIUM DIOXIDE SEMICONDUCTORS [J].
BRECKENRIDGE, RG ;
HOSLER, WR .
PHYSICAL REVIEW, 1953, 91 (04) :793-802
[3]  
DEVREESE JG, 1971, NATO ADVANCED STUDY
[5]   APPARATUS FOR MEASUREMENT OF HALL EFFECT IN SEMICONDUCTORS OF LOW MOBILITY AND HIGH RESISTIVITY [J].
HERMANN, AM ;
HAM, JS .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (11) :1553-&
[6]  
Kuper C., 1963, POLARONS EXCITONS
[7]   MOBILITY OF SLOW ELECTRONS IN POLAR CRYSTALS [J].
LOW, FE ;
PINES, D .
PHYSICAL REVIEW, 1955, 98 (02) :414-418
[8]   AC HALL MEASUREMENTS IN CRYSTALS OF STRONTIUM TITANATE FROM 190 TO 500 DEGREES K - DEPENDENCE OF HALL MOBILITY ON CHARGE-CARRIER DENSITY [J].
PARKER, D ;
YAHIA, J .
PHYSICAL REVIEW, 1968, 169 (03) :605-&