THERMALLY INDUCED ACCEPTORS IN GERMANIUM

被引：111

作者：

LOGAN, RA

机构：

来源：

PHYSICAL REVIEW | 1956年 / 101卷 / 05期

关键词：

D O I：

10.1103/PhysRev.101.1455

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1455 / 1459

页数：5

共 14 条

[1]

BOND, 1950, PHYS REV, V78, P176

[2]

FINE ME, 1953, J APPL PHYS, V24, P388

[3]

FULLER, 1954, PHYS REV, V93, P1182

[4] TEMPORARY TRAPS IN SILICON AND GERMANIUM [J].

HAYNES, JR ;

HORNBECK, JA .

PHYSICAL REVIEW, 1953, 90 (01) :152-153

[5]

HOPKINS, 1955, PHYS REV, V100, P1786

[6]

LARKHOROVITZ, 1948, PHYS REV, V73, P1256

[7] THERMALLY INDUCED ACCEPTORS IN SINGLE CRYSTAL GERMANIUM [J].

LOGAN, RA .

PHYSICAL REVIEW, 1953, 91 (03) :757-758

[8]

LOGAN RA, 1954, PHYS REV, V95, P46

[9] VACANCIES AND INTERSTITIALS IN HEAT TREATED GERMANIUM [J].

MAYBURG, S .

PHYSICAL REVIEW, 1954, 95 (01) :38-43

MCSKIMIN, HJ .