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SOME INVESTIGATIONS ON THE INFLUENCE OF DEFECTS-GRAIN BOUNDARIES ON PHOTO-VOLTAIC MECHANISMS IN POLYCRYSTALLINE SILICON FILMS
被引:6
作者
:
SOPORI, BL
论文数:
0
引用数:
0
h-index:
0
SOPORI, BL
BAGHDADI, A
论文数:
0
引用数:
0
h-index:
0
BAGHDADI, A
机构
:
来源
:
SOLAR CELLS
|
1980年
/ 1卷
/ 03期
关键词
:
D O I
:
10.1016/0379-6787(80)90070-8
中图分类号
:
TE [石油、天然气工业];
TK [能源与动力工程];
学科分类号
:
0807 ;
0820 ;
摘要
:
引用
收藏
页码:237 / 250
页数:14
相关论文
共 4 条
[1]
BAGHDADI A, 1978, 13TH PHOT SPEC C WAS
[2]
METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS
[J].
GOODMAN, AM
论文数:
0
引用数:
0
h-index:
0
GOODMAN, AM
.
JOURNAL OF APPLIED PHYSICS,
1961,
32
(12)
:2550
-&
[3]
MEASUREMENT OF MINORITY-CARRIER LIFETIME PROFILES IN SILICON
[J].
SCHWAB, G
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER GESELL ANGEW FORSCH,INST FEST KORPER TECHNOL,D-8000 MUNCHEN 60,BUNDES REPUBLIK
FRAUNHOFER GESELL ANGEW FORSCH,INST FEST KORPER TECHNOL,D-8000 MUNCHEN 60,BUNDES REPUBLIK
SCHWAB, G
;
BERNT, H
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER GESELL ANGEW FORSCH,INST FEST KORPER TECHNOL,D-8000 MUNCHEN 60,BUNDES REPUBLIK
FRAUNHOFER GESELL ANGEW FORSCH,INST FEST KORPER TECHNOL,D-8000 MUNCHEN 60,BUNDES REPUBLIK
BERNT, H
;
REICHL, H
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER GESELL ANGEW FORSCH,INST FEST KORPER TECHNOL,D-8000 MUNCHEN 60,BUNDES REPUBLIK
FRAUNHOFER GESELL ANGEW FORSCH,INST FEST KORPER TECHNOL,D-8000 MUNCHEN 60,BUNDES REPUBLIK
REICHL, H
.
SOLID-STATE ELECTRONICS,
1977,
20
(02)
:91
-&
[4]
EFFECTS OF OPTICAL BEAM SIZE ON DIFFUSION LENGTH MEASURED BY THE SURFACE PHOTO-VOLTAGE METHOD
[J].
SOPORI, BL
论文数:
0
引用数:
0
h-index:
0
SOPORI, BL
;
GURTLER, RW
论文数:
0
引用数:
0
h-index:
0
GURTLER, RW
;
LESK, IA
论文数:
0
引用数:
0
h-index:
0
LESK, IA
.
SOLID-STATE ELECTRONICS,
1980,
23
(02)
:139
-142
←
1
→
共 4 条
[1]
BAGHDADI A, 1978, 13TH PHOT SPEC C WAS
[2]
METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS
[J].
GOODMAN, AM
论文数:
0
引用数:
0
h-index:
0
GOODMAN, AM
.
JOURNAL OF APPLIED PHYSICS,
1961,
32
(12)
:2550
-&
[3]
MEASUREMENT OF MINORITY-CARRIER LIFETIME PROFILES IN SILICON
[J].
SCHWAB, G
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER GESELL ANGEW FORSCH,INST FEST KORPER TECHNOL,D-8000 MUNCHEN 60,BUNDES REPUBLIK
FRAUNHOFER GESELL ANGEW FORSCH,INST FEST KORPER TECHNOL,D-8000 MUNCHEN 60,BUNDES REPUBLIK
SCHWAB, G
;
BERNT, H
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER GESELL ANGEW FORSCH,INST FEST KORPER TECHNOL,D-8000 MUNCHEN 60,BUNDES REPUBLIK
FRAUNHOFER GESELL ANGEW FORSCH,INST FEST KORPER TECHNOL,D-8000 MUNCHEN 60,BUNDES REPUBLIK
BERNT, H
;
REICHL, H
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER GESELL ANGEW FORSCH,INST FEST KORPER TECHNOL,D-8000 MUNCHEN 60,BUNDES REPUBLIK
FRAUNHOFER GESELL ANGEW FORSCH,INST FEST KORPER TECHNOL,D-8000 MUNCHEN 60,BUNDES REPUBLIK
REICHL, H
.
SOLID-STATE ELECTRONICS,
1977,
20
(02)
:91
-&
[4]
EFFECTS OF OPTICAL BEAM SIZE ON DIFFUSION LENGTH MEASURED BY THE SURFACE PHOTO-VOLTAGE METHOD
[J].
SOPORI, BL
论文数:
0
引用数:
0
h-index:
0
SOPORI, BL
;
GURTLER, RW
论文数:
0
引用数:
0
h-index:
0
GURTLER, RW
;
LESK, IA
论文数:
0
引用数:
0
h-index:
0
LESK, IA
.
SOLID-STATE ELECTRONICS,
1980,
23
(02)
:139
-142
←
1
→