TEMPERATURE-DEPENDENCE OF DIFFUSIVITY-MOBILITY RATIO IN DEGENERATE SEMICONDUCTORS IN PRESENCE OF A LARGE MAGNETIC-FIELD

被引：23

作者：

CHAKRAVARTI, AN ^{[1
]}

PARUI, DP ^{[1
]}

机构：

[1] CALCUTTA UNIV, COLL SCI & TECHNOL, INST RADIO PHYS & ELECTR, CALCUTTA 9, INDIA

来源：

CANADIAN JOURNAL OF PHYSICS | 1973年 / 51卷 / 04期

关键词：

MAGNETIC FIELD EFFECTS - THERMAL EFFECTS;

D O I：

10.1139/p73-062

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The diffusivity-mobility ratio in degenerate semiconductors in the presence of a large magnetic field is found to increase with increasing temperature at a rate which is dependent on temperature of relatively low temperatures. It is also found that, at any given temperature, the ratio is increased by the application of the field.

引用

页码：491 / 492

页数：2