COMPARISON OF MOSFET LOGIC CIRCUITS

被引：14

作者：

COOK, PW ^{[1
]}

CRITCHLOW, DL ^{[1
]}

TERMAN, LM ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

关键词：

D O I：

10.1109/JSSC.1973.1050416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：348 / 355

页数：8

共 11 条

[1] SILICON-ON-SAPPHIRE COMPLEMENTARY MOS MEMORY CELLS
ALLISON, JF
HEIMAN, FP
BURNS, JR
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1967, SC 2 (04) : 208 - &
[2] AXELROD MS, 1968, Patent No. 3406298
[3] COHEN L, 1967, NEREM REC, P170
[4] CRAWFORD R, 1972, ELECTRONICS 0424, P85
[5] CRITCHLOW DL, 1968, MICROELECTRON S ST L
[6] CRITCHLOW DL, 1967, MICROELECTRON S ST L
[7] DENNARD RH, 1972, INT ELECTRON DEVICES
[8] DONATH W, PRIVATE COMMUNICATIO
[9] REUHLI AE, TO BE PUBLISHED
[10] Wanlass FM., 1963, IEEE SOLID STATE CIR, pp 32, DOI [10.1109/ISSCC.1963.1157450, DOI 10.1109/ISSCC.1963.1157450]